Справочник транзисторов. BU4508AF

 

Биполярный транзистор BU4508AF - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BU4508AF
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 45 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
   Макcимальный постоянный ток коллектора (Ic): 8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Ёмкость коллекторного перехода (Cc): 80 pf
   Статический коэффициент передачи тока (hfe): 12
   Корпус транзистора: SOT199

 Аналоги (замена) для BU4508AF

 

 

BU4508AF Datasheet (PDF)

 ..1. Size:75K  philips
bu4508af hg 3.pdf

BU4508AF
BU4508AF

DISCRETE SEMICONDUCTORSDATA SHEETBU4508AFSilicon Diffused Power TransistorProduct specification June 1998Supersedes data of January 1998File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon Diffused Power Transistor BU4508AFGENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a pl

 7.1. Size:46K  philips
bu4508az 2.pdf

BU4508AF
BU4508AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AZ GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptionaltolerance to base drive and collector current load

 7.2. Size:47K  philips
bu4508ax 2.pdf

BU4508AF
BU4508AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Featuresexceptional tolerance to base drive and collector curr

 7.3. Size:214K  inchange semiconductor
bu4508ax.pdf

BU4508AF
BU4508AF

isc Silicon NPN Power Transistor BU4508AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High-voltage high-speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of CTVreceivers and p.c monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

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