DISCRETE SEMICONDUCTORSDATA SHEETBU4508AFSilicon Diffused Power TransistorProduct specification June 1998Supersedes data of January 1998File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon Diffused Power Transistor BU4508AFGENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a pl

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AZ GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptionaltolerance to base drive and collector current load

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Featuresexceptional tolerance to base drive and collector curr

isc Silicon NPN Power Transistor BU4508AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High-voltage high-speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of CTVreceivers and p.c monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO