BU4508AX . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Featuresexceptional tolerance to base drive and collector curr

isc Silicon NPN Power Transistor BU4508AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High-voltage high-speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of CTVreceivers and p.c monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

DISCRETE SEMICONDUCTORSDATA SHEETBU4508AFSilicon Diffused Power TransistorProduct specification June 1998Supersedes data of January 1998File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon Diffused Power Transistor BU4508AFGENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a pl

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AZ GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptionaltolerance to base drive and collector current load

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers. Features exceptional tolerance to base drive an

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DF GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers. Features exceptional tolerance to base drive an

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.Features exceptional tolerance to base drive and collecto

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU4508DZ DESCRIPTION High Voltage- High Switching Speed Built-in Damer Diode APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Coll

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU4508DF DESCRIPTION With TO-3PFa package High voltage High speed switching Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER