All Transistors. BU4508AX Datasheet

 

BU4508AX Datasheet, Equivalent, Cross Reference Search


   Type Designator: BU4508AX
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 45 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
   Package: SOT399

 BU4508AX Transistor Equivalent Substitute - Cross-Reference Search

   

BU4508AX Datasheet (PDF)

 ..1. Size:47K  philips
bu4508ax 2.pdf

BU4508AX
BU4508AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Featuresexceptional tolerance to base drive and collector curr

 ..2. Size:214K  inchange semiconductor
bu4508ax.pdf

BU4508AX
BU4508AX

isc Silicon NPN Power Transistor BU4508AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High-voltage high-speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of CTVreceivers and p.c monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 7.1. Size:75K  philips
bu4508af hg 3.pdf

BU4508AX
BU4508AX

DISCRETE SEMICONDUCTORSDATA SHEETBU4508AFSilicon Diffused Power TransistorProduct specification June 1998Supersedes data of January 1998File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon Diffused Power Transistor BU4508AFGENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a pl

 7.2. Size:46K  philips
bu4508az 2.pdf

BU4508AX
BU4508AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AZ GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptionaltolerance to base drive and collector current load

 8.1. Size:44K  philips
bu4508dx 2.pdf

BU4508AX
BU4508AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers. Features exceptional tolerance to base drive an

 8.2. Size:43K  philips
bu4508df 2.pdf

BU4508AX
BU4508AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DF GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers. Features exceptional tolerance to base drive an

 8.3. Size:44K  philips
bu4508dz 2.pdf

BU4508AX
BU4508AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.Features exceptional tolerance to base drive and collecto

 8.4. Size:258K  inchange semiconductor
bu4508dz.pdf

BU4508AX
BU4508AX

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU4508DZ DESCRIPTION High Voltage- High Switching Speed Built-in Damer Diode APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Coll

 8.5. Size:83K  inchange semiconductor
bu4508df.pdf

BU4508AX
BU4508AX

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU4508DF DESCRIPTION With TO-3PFa package High voltage High speed switching Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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