BU4508DF Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU4508DF

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 45 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 800 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 80 pF

Ganancia de corriente contínua (hFE): 12

Encapsulados: SOT199

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BU4508DF datasheet

 ..1. Size:43K  philips
bu4508df 2.pdf pdf_icon

BU4508DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive an

 ..2. Size:83K  inchange semiconductor
bu4508df.pdf pdf_icon

BU4508DF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU4508DF DESCRIPTION With TO-3PFa package High voltage High speed switching Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER

 7.1. Size:44K  philips
bu4508dx 2.pdf pdf_icon

BU4508DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive an

 7.2. Size:44K  philips
bu4508dz 2.pdf pdf_icon

BU4508DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collecto

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