Биполярный транзистор BU4508DF - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BU4508DF
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 45 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 80 pf
Статический коэффициент передачи тока (hfe): 12
Корпус транзистора: SOT199
BU4508DF Datasheet (PDF)
bu4508df 2.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DF GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers. Features exceptional tolerance to base drive an
bu4508df.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU4508DF DESCRIPTION With TO-3PFa package High voltage High speed switching Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER
bu4508dx 2.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers. Features exceptional tolerance to base drive an
bu4508dz 2.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.Features exceptional tolerance to base drive and collecto
bu4508dz.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU4508DZ DESCRIPTION High Voltage- High Switching Speed Built-in Damer Diode APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Coll
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050