BU505DF Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU505DF

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 1550 V

Tensión colector-emisor (Vce): 700 V

Corriente del colector DC máxima (Ic): 2.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 22

Encapsulados: TO220F

 Búsqueda de reemplazo de BU505DF

- Selecciónⓘ de transistores por parámetros

 

BU505DF datasheet

 ..1. Size:218K  inchange semiconductor
bu505df.pdf pdf_icon

BU505DF

isc Silicon NPN Power Transistor BU505DF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

 8.1. Size:213K  inchange semiconductor
bu505d.pdf pdf_icon

BU505DF

isc Silicon NPN Power Transistor BU505D DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C

 9.1. Size:67K  philips
bu505f.pdf pdf_icon

BU505DF

DISCRETE SEMICONDUCTORS DATA SHEET BU505F; BU505DF Silicon diffused power transistors 1997 Aug 13 Product specification Supersedes data of December 1991 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BU505F; BU505DF DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 packa

 9.2. Size:62K  philips
bu505 1.pdf pdf_icon

BU505DF

DISCRETE SEMICONDUCTORS DATA SHEET BU505; BU505D Silicon diffused power transistors 1997 Aug 13 Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BU505; BU505D DESCRIPTION High-voltage, high-speed switching NPN power transistor in a TO-220AB package. The BU

Otros transistores... BU4508AF, BU4508AX, BU4508AZ, BU4508DF, BU4508DX, BU500, BU505, BU505D, 2N3906, BU505F, BU506, BU506D, BU506DF, BU506F, BU508, BU508A, BU508AF