BU505DF Todos los transistores

 

BU505DF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU505DF
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 1550 V
   Tensión colector-emisor (Vce): 700 V
   Corriente del colector DC máxima (Ic): 2.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 22
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de transistor bipolar BU505DF

 

BU505DF Datasheet (PDF)

 ..1. Size:218K  inchange semiconductor
bu505df.pdf

BU505DF
BU505DF

isc Silicon NPN Power Transistor BU505DFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 8.1. Size:213K  inchange semiconductor
bu505d.pdf

BU505DF
BU505DF

isc Silicon NPN Power Transistor BU505DDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

 9.1. Size:67K  philips
bu505f.pdf

BU505DF
BU505DF

DISCRETE SEMICONDUCTORSDATA SHEETBU505F; BU505DFSilicon diffused power transistors1997 Aug 13Product specificationSupersedes data of December 1991File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BU505F; BU505DFDESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a SOT186 packa

 9.2. Size:62K  philips
bu505 1.pdf

BU505DF
BU505DF

DISCRETE SEMICONDUCTORSDATA SHEETBU505; BU505DSilicon diffused power transistors1997 Aug 13Product specificationSupersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BU505; BU505DDESCRIPTIONHigh-voltage, high-speed switchingNPN power transistor in a TO-220ABpackage. The BU

 9.3. Size:141K  st
bu505.pdf

BU505DF
BU505DF

BU505High Voltage NPN MultiepitaxialFast-Switching TransistorFeatures HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH RUGGEDNESSApplications ELECTRONIC BALLASTS FOR 3FLUORESCENT LIGHTING21 SWITCH MODE POWER SUPPLIESTO-220DescriptionThe BU505 is a High Voltage NPN fastswitchingtransistor designed to be used in lightingapplication, like el

 9.4. Size:210K  inchange semiconductor
bu505f.pdf

BU505DF
BU505DF

isc Silicon NPN Power Transistor BU505FDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

 9.5. Size:189K  inchange semiconductor
bu505.pdf

BU505DF
BU505DF

INCHANGE Semiconductorisc Silicon NPN Power Transistor BU505DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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