BU505DF Datasheet, Equivalent, Cross Reference Search
Type Designator: BU505DF
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 1550 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 22
Noise Figure, dB: -
Package: TO220F
BU505DF Transistor Equivalent Substitute - Cross-Reference Search
BU505DF Datasheet (PDF)
bu505df.pdf
isc Silicon NPN Power Transistor BU505DFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
bu505d.pdf
isc Silicon NPN Power Transistor BU505DDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
bu505f.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBU505F; BU505DFSilicon diffused power transistors1997 Aug 13Product specificationSupersedes data of December 1991File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BU505F; BU505DFDESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a SOT186 packa
bu505 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBU505; BU505DSilicon diffused power transistors1997 Aug 13Product specificationSupersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BU505; BU505DDESCRIPTIONHigh-voltage, high-speed switchingNPN power transistor in a TO-220ABpackage. The BU
bu505.pdf
BU505High Voltage NPN MultiepitaxialFast-Switching TransistorFeatures HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH RUGGEDNESSApplications ELECTRONIC BALLASTS FOR 3FLUORESCENT LIGHTING21 SWITCH MODE POWER SUPPLIESTO-220DescriptionThe BU505 is a High Voltage NPN fastswitchingtransistor designed to be used in lightingapplication, like el
bu505f.pdf
isc Silicon NPN Power Transistor BU505FDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
bu505.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor BU505DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
