BU506D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU506D
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 700 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 5
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar BU506D
BU506D Datasheet (PDF)
bu506d.pdf
isc Silicon NPN Power Transistor BU506DDESCRIPTIONHigh VoltageHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers and in line-operated switch-mode applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector
bu506df.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBU506F; BU506DFSilicon diffused power transistorsProduct specification 1997 Aug 14Supersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BU506F; BU506DFDESCRIPTIONHigh-voltage, high-speed switchingNPN power transistor in a SOT186package. The B
bu506df.pdf
isc Silicon NPN Power Transistor BU506DFDESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in Integrated Efficiency DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers and in line-operated switch-mode applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
bu506.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBU506; BU506DSilicon diffused power transistors1997 Aug 13Product specificationSupersedes data of December 1991File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BU506; BU506DDESCRIPTIONHigh-voltage, high-speed, switchingNPN power transistor in a TO-220ABpackage. The B
bu506f.pdf
isc Silicon NPN Power Transistor BU506FDESCRIPTIONHigh VoltageHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers and in line-operated switch-mode applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector
bu506.pdf
isc Silicon NPN Power Transistor BU506DESCRIPTIONHigh VoltageHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers and in line-operated switch-mode applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-
bu506a.pdf
isc Silicon NPN Power Transistor BU506ADESCRIPTIONHigh VoltageHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers and in line-operated switch-mode applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: MM558-01 | S2824
Liste
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