All Transistors. BU506D Datasheet

 

BU506D Datasheet and Replacement


   Type Designator: BU506D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO220
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BU506D Datasheet (PDF)

 ..1. Size:212K  inchange semiconductor
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BU506D

isc Silicon NPN Power Transistor BU506DDESCRIPTIONHigh VoltageHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers and in line-operated switch-mode applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

 0.1. Size:69K  philips
bu506df.pdf pdf_icon

BU506D

DISCRETE SEMICONDUCTORSDATA SHEETBU506F; BU506DFSilicon diffused power transistorsProduct specification 1997 Aug 14Supersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BU506F; BU506DFDESCRIPTIONHigh-voltage, high-speed switchingNPN power transistor in a SOT186package. The B

 0.2. Size:214K  inchange semiconductor
bu506df.pdf pdf_icon

BU506D

isc Silicon NPN Power Transistor BU506DFDESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in Integrated Efficiency DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers and in line-operated switch-mode applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 9.1. Size:65K  philips
bu506.pdf pdf_icon

BU506D

DISCRETE SEMICONDUCTORSDATA SHEETBU506; BU506DSilicon diffused power transistors1997 Aug 13Product specificationSupersedes data of December 1991File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BU506; BU506DDESCRIPTIONHigh-voltage, high-speed, switchingNPN power transistor in a TO-220ABpackage. The B

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: DC5501 | 2SB1144S | BF420A | 2N2473 | BTB1424AT3 | 2N3183 | MM4019

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