BU508AF Todos los transistores

 

BU508AF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU508AF
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 34 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 700 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Capacitancia de salida (Cc): 125 pF
   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: ISOWATT218
 

 Búsqueda de reemplazo de BU508AF

   - Selección ⓘ de transistores por parámetros

 

BU508AF Datasheet (PDF)

 ..1. Size:48K  philips
bu508af 2.pdf pdf_icon

BU508AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use inhorizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VB

 ..2. Size:211K  st
bu508af.pdf pdf_icon

BU508AF

BU508AFHigh voltage NPN power transistor for standarddefinition CRT displayFeatures State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement32 Tight hFE range at operating collector current1 High ruggednessISOWATT218FX Fully insulated power pa

 ..3. Size:47K  fairchild semi
bu508af.pdf pdf_icon

BU508AF

BU508AF TV Horizontal Output ApplicationsTO-3PF11.Base 2.Collector 3.EmitterNPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 1

 ..4. Size:134K  inchange semiconductor
bu508af.pdf pdf_icon

BU508AF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

Otros transistores... BU505DF , BU505F , BU506 , BU506D , BU506DF , BU506F , BU508 , BU508A , 2SC4793 , BU508AFI , BU508AT , BU508AXI , BU508D , BU508DF , BU508DFI , BU508DR , BU508DRF .

History: 2SC3299Y | SDM4006 | 2SB378A | BLY53B | MP3903R | KSB1116L

 

 
Back to Top

 


 
.