BU522 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU522
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75 W
Tensión colector-base (Vcb): 400 V
Tensión colector-emisor (Vce): 350 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Capacitancia de salida (Cc): 300 pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar BU522
BU522 Datasheet (PDF)
bu522.pdf
isc Silicon Darlington NPN Power Transistor BU522DESCRIPTIONHigh VoltageLow Collector Saturation Voltage-: V = 2.5V @ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in ignition circuit.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 350 VCE
bu522bre.pdf
Order this documentMOTOROLAby BU522B/DSEMICONDUCTOR TECHNICAL DATABU522BHigh Voltage Silicon Power7 AMPERESDarlingtonsDARLINGTONPOWER TRANSISTORSPower Transistor mainly intended for use as ignition circuit output transistor.NPN SILICON Specified minimum sustaining voltage:450 VOLTSVCER(sus) = 425 V at IC = 1 A75 WATTS High S.O.A. capability:VCE = 400 V
bu522a.pdf
isc Silicon Darlington NPN Power Transistor BU522ADESCRIPTIONHigh VoltageLow Collector Saturation Voltage-: V = 2.0V @ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in ignition circuit.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 400 VC
bu522b.pdf
isc Silicon Darlington NPN Power Transistor BU522BDESCRIPTIONHigh VoltageLow Collector Saturation Voltage-: V = 2.0V @ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in ignition circuit.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 425 VC
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BD437S | BU2507AF | BD649F
History: BD437S | BU2507AF | BD649F
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050