BU522 . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

BU522 Datasheet (PDF)

..1. Size:211K inchange semiconductor
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isc Silicon Darlington NPN Power Transistor BU522DESCRIPTIONHigh VoltageLow Collector Saturation Voltage-: V = 2.5V @ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in ignition circuit.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 350 VCE

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Order this documentMOTOROLAby BU522B/DSEMICONDUCTOR TECHNICAL DATABU522BHigh Voltage Silicon Power7 AMPERESDarlingtonsDARLINGTONPOWER TRANSISTORSPower Transistor mainly intended for use as ignition circuit output transistor.NPN SILICON Specified minimum sustaining voltage:450 VOLTSVCER(sus) = 425 V at IC = 1 A75 WATTS High S.O.A. capability:VCE = 400 V

0.2. Size:211K inchange semiconductor
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isc Silicon Darlington NPN Power Transistor BU522ADESCRIPTIONHigh VoltageLow Collector Saturation Voltage-: V = 2.0V @ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in ignition circuit.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 400 VC

0.3. Size:211K inchange semiconductor
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isc Silicon Darlington NPN Power Transistor BU522BDESCRIPTIONHigh VoltageLow Collector Saturation Voltage-: V = 2.0V @ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in ignition circuit.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 425 VC

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .