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BU522A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU522A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 75 W
   Tensión colector-base (Vcb): 450 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Capacitancia de salida (Cc): 300 pF
   Ganancia de corriente contínua (hfe): 250
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar BU522A

 

BU522A Datasheet (PDF)

 ..1. Size:211K  inchange semiconductor
bu522a.pdf

BU522A
BU522A

isc Silicon Darlington NPN Power Transistor BU522ADESCRIPTIONHigh VoltageLow Collector Saturation Voltage-: V = 2.0V @ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in ignition circuit.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 400 VC

 9.1. Size:105K  motorola
bu522bre.pdf

BU522A
BU522A

Order this documentMOTOROLAby BU522B/DSEMICONDUCTOR TECHNICAL DATABU522BHigh Voltage Silicon Power7 AMPERESDarlingtonsDARLINGTONPOWER TRANSISTORSPower Transistor mainly intended for use as ignition circuit output transistor.NPN SILICON Specified minimum sustaining voltage:450 VOLTSVCER(sus) = 425 V at IC = 1 A75 WATTS High S.O.A. capability:VCE = 400 V

 9.2. Size:211K  inchange semiconductor
bu522.pdf

BU522A
BU522A

isc Silicon Darlington NPN Power Transistor BU522DESCRIPTIONHigh VoltageLow Collector Saturation Voltage-: V = 2.5V @ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in ignition circuit.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 350 VCE

 9.3. Size:211K  inchange semiconductor
bu522b.pdf

BU522A
BU522A

isc Silicon Darlington NPN Power Transistor BU522BDESCRIPTIONHigh VoltageLow Collector Saturation Voltage-: V = 2.0V @ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in ignition circuit.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 425 VC

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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