BU522B Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU522B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75 W
Tensión colector-base (Vcb): 475 V
Tensión colector-emisor (Vce): 450 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Capacitancia de salida (Cc): 300 pF
Ganancia de corriente contínua (hFE): 250
Encapsulados: TO220
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BU522B datasheet
bu522b.pdf
isc Silicon Darlington NPN Power Transistor BU522B DESCRIPTION High Voltage Low Collector Saturation Voltage- V = 2.0V @ I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in ignition circuit. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage 425 V C
bu522.pdf
isc Silicon Darlington NPN Power Transistor BU522 DESCRIPTION High Voltage Low Collector Saturation Voltage- V = 2.5V @ I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in ignition circuit. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage 350 V CE
bu522a.pdf
isc Silicon Darlington NPN Power Transistor BU522A DESCRIPTION High Voltage Low Collector Saturation Voltage- V = 2.0V @ I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in ignition circuit. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage 400 V C
Otros transistores... BU508DFI, BU508DR, BU508DRF, BU508DXI, BU508FI, BU508L, BU522, BU522A, 8050, BU526, BU526A, BU526A-4, BU526A-5, BU526A-6, BU526A-7, BU526A-8, BU536
History: PN706A
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