BU526A-4 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU526A-4
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 86 W
Tensión colector-base (Vcb): 400 V
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 10 MHz
Ganancia de corriente contínua (hFE): 15
Encapsulados: TO3
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BU526A-4 datasheet
bu526a.pdf
isc Silicon NPN Power Transistor BU526A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 460V(Min.) (BR)CEO High Speed Switching High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT Colle
bu526 bu526a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU526 BU526A DESCRIPTION With TO-3 package Short switching times. High dielectric strength. APPLICATIONS For use in power supply units of TV receives. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=
bu526.pdf
isc Silicon NPN Power Transistor BU526 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min.) (BR)CEO High Speed Switching High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT Collec
Otros transistores... BU508DXI, BU508FI, BU508L, BU522, BU522A, BU522B, BU526, BU526A, TIP127, BU526A-5, BU526A-6, BU526A-7, BU526A-8, BU536, BU546, BU603, BU606
History: 2SB1071A
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