BU526A-4 Datasheet and Replacement
Type Designator: BU526A-4
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 86 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BU526A-4 Substitution
BU526A-4 Datasheet (PDF)
bu526a.pdf

isc Silicon NPN Power Transistor BU526ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 460V(Min.)(BR)CEOHigh Speed SwitchingHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching mode power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITColle
bu526 bu526a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU526 BU526A DESCRIPTION With TO-3 package Short switching times. High dielectric strength. APPLICATIONS For use in power supply units of TV receives. PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=
bu526.pdf

isc Silicon NPN Power Transistor BU526DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min.)(BR)CEOHigh Speed SwitchingHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching mode power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITCollec
Datasheet: BU508DXI , BU508FI , BU508L , BU522 , BU522A , BU522B , BU526 , BU526A , 2SC945 , BU526A-5 , BU526A-6 , BU526A-7 , BU526A-8 , BU536 , BU546 , BU603 , BU606 .
History: DRC4114W | 2SA1971 | BUP38
Keywords - BU526A-4 transistor datasheet
BU526A-4 cross reference
BU526A-4 equivalent finder
BU526A-4 lookup
BU526A-4 substitution
BU526A-4 replacement
History: DRC4114W | 2SA1971 | BUP38



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