BU526A-4 Datasheet, Equivalent, Cross Reference Search
Type Designator: BU526A-4
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 86 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BU526A-4 Transistor Equivalent Substitute - Cross-Reference Search
BU526A-4 Datasheet (PDF)
bu526a.pdf
isc Silicon NPN Power Transistor BU526ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 460V(Min.)(BR)CEOHigh Speed SwitchingHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching mode power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITColle
bu526 bu526a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU526 BU526A DESCRIPTION With TO-3 package Short switching times. High dielectric strength. APPLICATIONS For use in power supply units of TV receives. PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=
bu526.pdf
isc Silicon NPN Power Transistor BU526DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min.)(BR)CEOHigh Speed SwitchingHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching mode power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITCollec
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
