BU526A-6 Todos los transistores

 

BU526A-6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU526A-6
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 86 W
   Tensión colector-base (Vcb): 600 V
   Tensión colector-emisor (Vce): 350 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar BU526A-6

 

BU526A-6 Datasheet (PDF)

 8.1. Size:205K  inchange semiconductor
bu526a.pdf

BU526A-6
BU526A-6

isc Silicon NPN Power Transistor BU526ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 460V(Min.)(BR)CEOHigh Speed SwitchingHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching mode power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITColle

 8.2. Size:117K  inchange semiconductor
bu526 bu526a.pdf

BU526A-6
BU526A-6

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU526 BU526A DESCRIPTION With TO-3 package Short switching times. High dielectric strength. APPLICATIONS For use in power supply units of TV receives. PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=

 9.1. Size:205K  inchange semiconductor
bu526.pdf

BU526A-6
BU526A-6

isc Silicon NPN Power Transistor BU526DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min.)(BR)CEOHigh Speed SwitchingHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching mode power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITCollec

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