BU705 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU705

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 78 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 700 V

Corriente del colector DC máxima (Ic): 2.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 7.5 MHz

Capacitancia de salida (Cc): 80 pF

Ganancia de corriente contínua (hFE): 2.25

Encapsulados: TOP3

 Búsqueda de reemplazo de BU705

- Selecciónⓘ de transistores por parámetros

 

BU705 datasheet

 ..1. Size:216K  inchange semiconductor
 bu705.pdf pdf_icon

BU705

isc Silicon NPN Power Transistor BU705 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collecto

 0.1. Size:214K  inchange semiconductor
 bu705df.pdf pdf_icon

BU705

isc Silicon NPN Power Transistor BU705DF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Built-in Integrated Efficiency Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 )

 0.2. Size:212K  inchange semiconductor
 bu705f.pdf pdf_icon

BU705

isc Silicon NPN Power Transistor BU705F DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect

 0.3. Size:219K  inchange semiconductor
 bu705d.pdf pdf_icon

BU705

isc Silicon NPN Power Transistor BU705D DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Built-in Integrated Efficiency Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

MOSTRAR MÁS

Otros transistores... BU606, BU606D, BU607, BU607D, BU608, BU608D, BU626, BU626A, D209L, BU705D, BU705DF, BU705F, BU706, BU706D, BU706DF, BU706F, BU724