BU706DF Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU706DF
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 29 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 700 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 7.5
Encapsulados: ISOWATT218
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BU706DF datasheet
bu706df.pdf
isc Silicon NPN Power Transistor BU706DF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Built-in Integrated Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications
bu706d.pdf
isc Silicon NPN Power Transistor BU706D DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Built-in Integrated Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications A
bu706f.pdf
isc Silicon NPN Power Transistor BU706F DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(T =25
Otros transistores... BU626, BU626A, BU705, BU705D, BU705DF, BU705F, BU706, BU706D, 2SD669A, BU706F, BU724, BU724A, BU724AS, BU726, BU800, BU800A, BU800S
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