BU706DF Specs and Replacement
Type Designator: BU706DF
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 29 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 7.5
Package: ISOWATT218
BU706DF Substitution
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BU706DF datasheet
isc Silicon NPN Power Transistor BU706DF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Built-in Integrated Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications ... See More ⇒
isc Silicon NPN Power Transistor BU706D DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Built-in Integrated Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications A... See More ⇒
isc Silicon NPN Power Transistor BU706F DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒
Detailed specifications: BU626, BU626A, BU705, BU705D, BU705DF, BU705F, BU706, BU706D, 2SD669A, BU706F, BU724, BU724A, BU724AS, BU726, BU800, BU800A, BU800S
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