BU807 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BU807
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 60 W
   Tensión colector-base (Vcb): 330 V
   Tensión colector-emisor (Vce): 150 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO220

Búsqueda de reemplazo de transistor bipolar BU807

BU807 Datasheet (PDF)

..1. Size:57K st
bu806 bu807.pdf

BU806BU807MEDIUM VOLTAGE NPN FAST SWITCHINGDARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATION HORIZONTAL DEFLECTION FOR32MONOCHROME TVs 1DESCRIPTION TO-220The devices are silicon Epitaxial Planar NPNpower transistors in Darlington configu

..2. Size:39K fairchild semi
bu806 bu807.pdf

BU806/807High Voltage & Fast Switching Darlington Transistor Using In Horizontal Output Stages of 110 Crt Video Displays BUILT-IN SPEED-UP Diode Between Base and EmitterTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base V

..3. Size:54K samsung
bu806 bu807.pdf

NPN EPITAXIALBU806/807 SILICON DARLINGTON TRANSISTORFAST SWITCHING DARLINGTONTO-220TRANSISTORHIGH VOLTAGE DARLINGTON TRANSISTORUSING IN HORIZONTAL OUTPUT STAGESOF 110 CTR VIDEO DISPLAYSBUILT-IN SPEED-UP Diode Between Base and EmitterABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage : BU806 VCBO 400 V1.Base 2.Collector 3.Emitter : BU807

..4. Size:196K inchange semiconductor
bu807.pdf

isc Silicon NPN Darlington Power Transistor BU807DESCRIPTIONHigh Voltage: V = 330V(Min)CBOLow Saturation Voltage-: V = 1.5V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits in TVsand CRTs.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

0.1. Size:197K inchange semiconductor
bu807fi.pdf

isc Silicon NPN Darlington Power Transistor BU807FIDESCRIPTIONHigh Voltage: V = 330V(Min)CBOLow Saturation Voltage-: V = 1.5V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits in TVsand CRTs.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

0.2. Size:200K inchange semiconductor
bu807f.pdf

isc Silicon NPN Darlington Power Transistor BU807FDESCRIPTIONHigh Voltage: V = 330V(Min)CBOLow Saturation Voltage-: V = 1.5V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits in TVsand CRTs.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MMBT1815-H | 3DA77 | MMBA811C5

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