BU807 Datasheet, Equivalent, Cross Reference Search
Type Designator: BU807
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 330 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220
BU807 Transistor Equivalent Substitute - Cross-Reference Search
BU807 Datasheet (PDF)
bu806 bu807.pdf
BU806BU807MEDIUM VOLTAGE NPN FAST SWITCHINGDARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATION HORIZONTAL DEFLECTION FOR32MONOCHROME TVs 1DESCRIPTION TO-220The devices are silicon Epitaxial Planar NPNpower transistors in Darlington configu
bu806 bu807.pdf
BU806/807High Voltage & Fast Switching Darlington Transistor Using In Horizontal Output Stages of 110 Crt Video Displays BUILT-IN SPEED-UP Diode Between Base and EmitterTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base V
bu806 bu807.pdf
NPN EPITAXIALBU806/807 SILICON DARLINGTON TRANSISTORFAST SWITCHING DARLINGTONTO-220TRANSISTORHIGH VOLTAGE DARLINGTON TRANSISTORUSING IN HORIZONTAL OUTPUT STAGESOF 110 CTR VIDEO DISPLAYSBUILT-IN SPEED-UP Diode Between Base and EmitterABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage : BU806 VCBO 400 V1.Base 2.Collector 3.Emitter : BU807
bu807.pdf
isc Silicon NPN Darlington Power Transistor BU807DESCRIPTIONHigh Voltage: V = 330V(Min)CBOLow Saturation Voltage-: V = 1.5V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits in TVsand CRTs.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
bu807fi.pdf
isc Silicon NPN Darlington Power Transistor BU807FIDESCRIPTIONHigh Voltage: V = 330V(Min)CBOLow Saturation Voltage-: V = 1.5V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits in TVsand CRTs.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
bu807f.pdf
isc Silicon NPN Darlington Power Transistor BU807FDESCRIPTIONHigh Voltage: V = 330V(Min)CBOLow Saturation Voltage-: V = 1.5V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits in TVsand CRTs.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
