BU808 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU808

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 160 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 700 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO3

 Búsqueda de reemplazo de BU808

- Selecciónⓘ de transistores por parámetros

 

BU808 datasheet

 ..1. Size:75K  inchange semiconductor
 bu808.pdf pdf_icon

BU808

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU808 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 700V(Min) High Switching Speed APPLICATIONS Designed for use in three-phase AC motor control systems ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage VBE=0 1500 V VCEO Colle

 0.1. Size:219K  st
 bu808dfh.pdf pdf_icon

BU808

BU808DFH HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR NEW Fully Plastic TO-220 for HIGH VOLTAGE APPLICATIONS NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1400 V ) HIGH DC CURRENT GAIN ( TYP. 150 ) LOW BASE-DRIVE REQUIREMENTS DEDICATED APPLICATION NOTE AN1184 FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNT

 0.2. Size:71K  st
 bu808df1.pdf pdf_icon

BU808

BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON WITH INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE HIGH VOLTAGE CAPABILITY HIGH DC CURRENT GAIN U.L. RECOGNISED ISOWATT218 PACKAGE 3 (U.L. FILE # E81734 (N)) 2 LOW BASE-DRIVE REQUIREMENTS 1 COST AND SPACE SAVING. ISOWATT218 APPLICATIONS HORIZONTAL DE

 0.3. Size:73K  st
 bu808dfi.pdf pdf_icon

BU808

BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1400 V ) HIGH DC CURRENT GAIN ( TYP. 150 ) FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING 3 LOW BASE-DRIVE REQUIREMENTS 2 DEDICATED APPLICATION NOTE AN1184 1

MOSTRAR MÁS

Otros transistores... BU800S, BU801, BU806, BU806F, BU806FI, BU807, BU807F, BU807FI, TIP32C, 2SB647-C, BU808DFI, BU808DXI, BU808FI, BU810, BU824, BU826, BU826A