BU808 . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

BU808 Datasheet (PDF)

..1. Size:75K inchange semiconductor
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU808 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) High Switching Speed APPLICATIONSDesigned for use in three-phase AC motor control systems ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage VBE=0 1500 VVCEO Colle

0.1. Size:219K st
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BU808DFHHIGH VOLTAGE FAST-SWITCHINGNPN POWER DARLINGTON TRANSISTOR NEW Fully Plastic TO-220 for HIGHVOLTAGE APPLICATIONS NPN MONOLITHIC DARLINGTON WITHINTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1400 V ) HIGH DC CURRENT GAIN ( TYP. 150 ) LOW BASE-DRIVE REQUIREMENTS DEDICATED APPLICATION NOTE AN1184 FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNT

0.2. Size:71K st
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BU808DFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER DARLINGTON STMicroelectronics PREFERREDSALESTYPE NPN DARLINGTON WITH INTEGRATEDANTIPARALLEL COLLECTOR-EMITTERDIODE HIGH VOLTAGE CAPABILITY HIGH DC CURRENT GAIN U.L. RECOGNISED ISOWATT218 PACKAGE3(U.L. FILE # E81734 (N))2 LOW BASE-DRIVE REQUIREMENTS1 COST AND SPACE SAVING.ISOWATT218APPLICATIONS HORIZONTAL DE

0.3. Size:73K st
bu808dfi.pdf pdf_icon

BU808DFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN MONOLITHIC DARLINGTON WITHINTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1400 V ) HIGH DC CURRENT GAIN ( TYP. 150 ) FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING3 LOW BASE-DRIVE REQUIREMENTS2 DEDICATED APPLICATION NOTE AN11841

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .