BU808 Todos los transistores

 

BU808 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU808
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 160 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 700 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar BU808

 

BU808 Datasheet (PDF)

 ..1. Size:75K  inchange semiconductor
bu808.pdf

BU808
BU808

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU808 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) High Switching Speed APPLICATIONSDesigned for use in three-phase AC motor control systems ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage VBE=0 1500 VVCEO Colle

 0.1. Size:219K  st
bu808dfh.pdf

BU808
BU808

BU808DFHHIGH VOLTAGE FAST-SWITCHINGNPN POWER DARLINGTON TRANSISTOR NEW Fully Plastic TO-220 for HIGHVOLTAGE APPLICATIONS NPN MONOLITHIC DARLINGTON WITHINTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1400 V ) HIGH DC CURRENT GAIN ( TYP. 150 ) LOW BASE-DRIVE REQUIREMENTS DEDICATED APPLICATION NOTE AN1184 FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNT

 0.2. Size:71K  st
bu808df1.pdf

BU808
BU808

BU808DFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER DARLINGTON STMicroelectronics PREFERREDSALESTYPE NPN DARLINGTON WITH INTEGRATEDANTIPARALLEL COLLECTOR-EMITTERDIODE HIGH VOLTAGE CAPABILITY HIGH DC CURRENT GAIN U.L. RECOGNISED ISOWATT218 PACKAGE3(U.L. FILE # E81734 (N))2 LOW BASE-DRIVE REQUIREMENTS1 COST AND SPACE SAVING.ISOWATT218APPLICATIONS HORIZONTAL DE

 0.3. Size:73K  st
bu808dfi.pdf

BU808
BU808

BU808DFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN MONOLITHIC DARLINGTON WITHINTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1400 V ) HIGH DC CURRENT GAIN ( TYP. 150 ) FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING3 LOW BASE-DRIVE REQUIREMENTS2 DEDICATED APPLICATION NOTE AN11841

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
Back to Top

 


BU808
  BU808
  BU808
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050

 

 

 
Back to Top