BU826 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU826

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 125 W

Tensión colector-base (Vcb): 800 V

Tensión colector-emisor (Vce): 375 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 50

Encapsulados: TOP3

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BU826 datasheet

 ..1. Size:218K  inchange semiconductor
 bu826.pdf pdf_icon

BU826

isc Silicon NPN Darlington Power Transistor BU826 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 375V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated switchmode applications such as Switching regulators Inverters Solenoid and relay drivers ABSOLUTE MAX

 0.1. Size:218K  inchange semiconductor
 bu826a.pdf pdf_icon

BU826

isc Silicon NPN Darlington Power Transistor BU826A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated switchmode applications such as Switching regulators Inverters Solenoid and relay drivers ABSOLUTE MA

Otros transistores... BU807FI, BU808, 2SB647-C, BU808DFI, BU808DXI, BU808FI, BU810, BU824, D667, BU826A, BU902, BU902F, BU903, BU903F, BU908, BU908AF, BU910