BU826 Specs and Replacement

Type Designator: BU826

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 375 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TOP3

 BU826 Substitution

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BU826 datasheet

 ..1. Size:218K  inchange semiconductor

 bu826.pdf pdf_icon

BU826

isc Silicon NPN Darlington Power Transistor BU826 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 375V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated switchmode applications such as Switching regulators Inverters Solenoid and relay drivers ABSOLUTE MAX... See More ⇒

 0.1. Size:218K  inchange semiconductor

 bu826a.pdf pdf_icon

BU826

isc Silicon NPN Darlington Power Transistor BU826A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated switchmode applications such as Switching regulators Inverters Solenoid and relay drivers ABSOLUTE MA... See More ⇒

Detailed specifications: BU807FI, BU808, 2SB647-C, BU808DFI, BU808DXI, BU808FI, BU810, BU824, D667, BU826A, BU902, BU902F, BU903, BU903F, BU908, BU908AF, BU910

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