BU931TFI Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU931TFI
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45 W
Tensión colector-base (Vcb): 500 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 80
Encapsulados: TO220F
Búsqueda de reemplazo de BU931TFI
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BU931TFI datasheet
8.1. Size:654K st
bu931t.pdf 
BU931T Automotive-grade high voltage ignition coil driver NPN power Darlington transistor Datasheet - production data Features AEC-Q101 qualified Very rugged Bipolar technology TAB High operating junction temperature Applications 3 High ruggedness electronic ignitions 2 1 Description TO-220 This is a high voltage power Darlington transistor developed
8.2. Size:213K inchange semiconductor
bu931t.pdf
isc Silicon NPN Power Transistor BU931T DESCRIPTION High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V E
9.1. Size:77K st
bu931-bub931t.pdf
BU931T BUB931T HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX T4 ) APPLICATIONS 3 3 2 HIGH RUGGEDNESS ELECTRONIC 1 1 IGNITIONS TO-220 D2PAK TO-263 INTERNAL SCHEMATIC DIAG
9.2. Size:97K st
bu931 bu931p bu931pfi.pdf
BU931/BU931P BU931PFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES TO-3 APPLICATIONS 1 HIGH RUGGEDNESS ELECTRONIC 2 IGNITIONS 3 3 2 2 1 1 TO-218 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM for TO-3 Emitter pin 2 Base pin1 Collector tab ABSOLUTE MAXIMUM RATINGS Symbol Pa
9.3. Size:217K inchange semiconductor
bu931rpfi.pdf
isc Silicon NPN Power Transistor BU931RPFI DESCRIPTION High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 450 V CBO V Collector-Emitter Voltage 400 V CEO
9.4. Size:132K inchange semiconductor
bu931r bu932r.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU931R BU932R DESCRIPTION With TO-3 package DARLINGTON APPLICATIONS Automotive ignition applications Inverters circuits for motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBO
9.5. Size:216K inchange semiconductor
bu931p.pdf
isc Silicon NPN Power Transistor BU931P DESCRIPTION High Voltage DARLINGTON Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 4
9.6. Size:223K inchange semiconductor
bu931zpfi.pdf
isc Silicon NPN Darlington Power Transistor BU931ZPFI DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min.) CEO(SUS) High Reliability Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS(T
9.7. Size:212K inchange semiconductor
bu931z.pdf
isc Silicon NPN Darlington Power Transistor BU931Z DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min.) CEO(SUS) High Reliability Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS(T =2
9.8. Size:208K inchange semiconductor
bu931.pdf
isc Silicon NPN Power Transistor BU931 DESCRIPTION High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Em
9.9. Size:218K inchange semiconductor
bu931zp.pdf
isc Silicon NPN Darlington Power Transistor BU931ZP DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min.) CEO(SUS) High Reliability Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS(T =
9.10. Size:208K inchange semiconductor
bu931r.pdf
isc Silicon NPN Power Transistor BU931R DESCRIPTION High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 450 V CBO V Collector-Emitter Voltage 400 V CEO V E
9.11. Size:218K inchange semiconductor
bu931rp.pdf
isc Silicon NPN Power Transistor BU931RP DESCRIPTION High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 450 V CBO V Collector-Emitter Voltage 400 V CEO V
Otros transistores... BU931, BU931P, BU931PFI, BU931R, BU931RP, BU931RPFI, BU931SM, BU931T, S8550, BU931Z, BU931ZP, BU931ZPFI, BU931ZT, BU931ZTFI, BU932, BU932P, BU932R
