BU941PFI . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU941PFI
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 65 W
Tensión colector-base (Vcb): 500 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta: ISOWATT218
Búsqueda de reemplazo de transistor bipolar BU941PFI
BU941PFI Datasheet (PDF)
bu941p.pdf
BU941/BU941PBU941PFIHIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODETO-3 VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION1TEMPERATURE2 WIDE RANGE OF PACKAGESAPPLICATIONS HIGH RUGGEDNESS ELECTRONICIGNITIONS33221 1TO-218 ISOWATT218INTERNAL SCHEMA
bu941p.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors BU941P DESCRIPTION With TO-3PN package DARLINGTON High breakdown voltage APPLICATIONS High ruggedness electronic ignitions. High voltage ignition coil driver PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbso
bu941pt4tl.pdf
BU941PT4TLSilicon NPN Power TransistorDESCRIPTIONHigh VoltageDARLINGTONAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (TB B=25)aSYMBOL PARAMETER VALUE UNITVB B Collector-Base Voltage 500 VCBOVB B Collector-Emitter Voltage 400 VCEOVB B Emitter-Base Voltage 5 VEBOIB B Collector Current- Continu
bu941p.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor BU941PDESCRIPTIONHigh VoltageDARLINGTONAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (TB B=25)aSYMBOL PARAMETER VALUE UNITVB B Collector-Base Voltage 500 VCBOVB B Collector-Emitter Voltage 400 VCEOVB B Emitter-Base Voltage 5 VEBO
bu941p.pdf
isc Silicon NPN Power Transistor BU941PDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (TB B=25)aSYMBOL PARAMETER VALUE UNITVB B Collector-Base Voltage 500 VCBOVB B Collector-Emitter Voltage 400 V
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: SDM4002
History: SDM4002
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D