BUF410AI . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUF410AI
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 85 W
Tensión colector-base (Vcb): 1000 V
Tensión colector-emisor (Vce): 450 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: ISOTOP
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BUF410AI Datasheet (PDF)
buf410ai.pdf
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isc Silicon NPN Power Transistor BUF410AIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-frequency power supplies andmotor control applications.ABSOLUTE MAXIMUM RATINGS(T =25)
buf410a.pdf
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BUF410AHigh voltage fast-switching NPN power transistorFeatures High voltage capability Very high switching speed Minimum lot-to-lot spread for reliable operation Low base-drive requirementsApplications 321 Switch mode power suppliesTO-247 Motor control DescriptionThe BUF410A is manufactured using high voltage Figure 1. Internal schematic diagram
buf410a.pdf
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF410A DESCRIPTION High Voltage High Speed Switching APPLICATIONS Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCEV Collector-Emitter Voltage VBE= -1.5V 1000 V VCEO Collector-Emitter Vo
buf410.pdf
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BUF410HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTSAPPLICATIONS:3 SWITCH MODE POWER SUPPLIES2 MOTOR CONTROL1DESCRIPTIONTO-218The BUF410 is manufactured using High VoltageMulti Epitaxial Planar technolo
buf410.pdf
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF410 DESCRIPTION High Voltage High Speed Switching APPLICATIONS Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCEV Collector-Emitter Voltage VBE= -1.5V 850 V VCEO Collector-Emitter Volt
buf410i.pdf
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isc Silicon NPN Power Transistor BUF410IDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-frequency power supplies andmotor control applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .