BUF410AI. Аналоги и основные параметры

Наименование производителя: BUF410AI

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 85 W

Макcимально допустимое напряжение коллектор-база (Ucb): 1000 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450 V

Макcимальный постоянный ток коллектора (Ic): 15 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 100

Корпус транзистора: ISOTOP

 Аналоги (замена) для BUF410AI

- подборⓘ биполярного транзистора по параметрам

 

BUF410AI даташит

 ..1. Size:216K  inchange semiconductor
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BUF410AI

isc Silicon NPN Power Transistor BUF410AI DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min.) CEO(SUS) High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

 7.1. Size:146K  st
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BUF410AI

BUF410A High voltage fast-switching NPN power transistor Features High voltage capability Very high switching speed Minimum lot-to-lot spread for reliable operation Low base-drive requirements Applications 3 2 1 Switch mode power supplies TO-247 Motor control Description The BUF410A is manufactured using high voltage Figure 1. Internal schematic diagram

 7.2. Size:105K  inchange semiconductor
buf410a.pdfpdf_icon

BUF410AI

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF410A DESCRIPTION High Voltage High Speed Switching APPLICATIONS Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VBE= -1.5V 1000 V VCEO Collector-Emitter Vo

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buf410.pdfpdf_icon

BUF410AI

BUF410 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS APPLICATIONS 3 SWITCH MODE POWER SUPPLIES 2 MOTOR CONTROL 1 DESCRIPTION TO-218 The BUF410 is manufactured using High Voltage Multi Epitaxial Planar technolo

Другие транзисторы: BUD98, BUD98I, BUF405, BUF405A, BUF405AFI, BUF405AXI, BUF410, BUF410A, D667, BUF410FI, BUF410I, BUF420, BUF420A, BUF420AI, BUF420AM, BUF420I, BUF420M