BUF410I Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUF410I

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 85 W

Tensión colector-base (Vcb): 850 V

Tensión colector-emisor (Vce): 450 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 100

Encapsulados: TOP3

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BUF410I datasheet

 ..1. Size:216K  inchange semiconductor
buf410i.pdf pdf_icon

BUF410I

isc Silicon NPN Power Transistor BUF410I DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min.) CEO(SUS) High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.1. Size:146K  st
buf410a.pdf pdf_icon

BUF410I

BUF410A High voltage fast-switching NPN power transistor Features High voltage capability Very high switching speed Minimum lot-to-lot spread for reliable operation Low base-drive requirements Applications 3 2 1 Switch mode power supplies TO-247 Motor control Description The BUF410A is manufactured using high voltage Figure 1. Internal schematic diagram

 8.2. Size:69K  st
buf410.pdf pdf_icon

BUF410I

BUF410 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS APPLICATIONS 3 SWITCH MODE POWER SUPPLIES 2 MOTOR CONTROL 1 DESCRIPTION TO-218 The BUF410 is manufactured using High Voltage Multi Epitaxial Planar technolo

 8.3. Size:105K  inchange semiconductor
buf410a.pdf pdf_icon

BUF410I

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF410A DESCRIPTION High Voltage High Speed Switching APPLICATIONS Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VBE= -1.5V 1000 V VCEO Collector-Emitter Vo

Otros transistores... BUF405, BUF405A, BUF405AFI, BUF405AXI, BUF410, BUF410A, BUF410AI, BUF410FI, BDT88, BUF420, BUF420A, BUF420AI, BUF420AM, BUF420I, BUF420M, BUF460AV, BUF460V