BUF410I
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUF410I
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 85
W
Tensión colector-base (Vcb): 850
V
Tensión colector-emisor (Vce): 450
V
Corriente del colector DC máxima (Ic): 15
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
TOP3
Búsqueda de reemplazo de transistor bipolar BUF410I
BUF410I
Datasheet (PDF)
..1. Size:216K inchange semiconductor
buf410i.pdf 
isc Silicon NPN Power Transistor BUF410IDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-frequency power supplies andmotor control applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
8.1. Size:146K st
buf410a.pdf
BUF410AHigh voltage fast-switching NPN power transistorFeatures High voltage capability Very high switching speed Minimum lot-to-lot spread for reliable operation Low base-drive requirementsApplications 321 Switch mode power suppliesTO-247 Motor control DescriptionThe BUF410A is manufactured using high voltage Figure 1. Internal schematic diagram
8.2. Size:69K st
buf410.pdf
BUF410HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTSAPPLICATIONS:3 SWITCH MODE POWER SUPPLIES2 MOTOR CONTROL1DESCRIPTIONTO-218The BUF410 is manufactured using High VoltageMulti Epitaxial Planar technolo
8.3. Size:105K inchange semiconductor
buf410a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF410A DESCRIPTION High Voltage High Speed Switching APPLICATIONS Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCEV Collector-Emitter Voltage VBE= -1.5V 1000 V VCEO Collector-Emitter Vo
8.4. Size:265K inchange semiconductor
buf410.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF410 DESCRIPTION High Voltage High Speed Switching APPLICATIONS Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCEV Collector-Emitter Voltage VBE= -1.5V 850 V VCEO Collector-Emitter Volt
8.5. Size:216K inchange semiconductor
buf410ai.pdf
isc Silicon NPN Power Transistor BUF410AIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-frequency power supplies andmotor control applications.ABSOLUTE MAXIMUM RATINGS(T =25)
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
