BUF410I Datasheet, Equivalent, Cross Reference Search
Type Designator: BUF410I
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TOP3
BUF410I Transistor Equivalent Substitute - Cross-Reference Search
BUF410I Datasheet (PDF)
buf410i.pdf
isc Silicon NPN Power Transistor BUF410IDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-frequency power supplies andmotor control applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
buf410a.pdf
BUF410AHigh voltage fast-switching NPN power transistorFeatures High voltage capability Very high switching speed Minimum lot-to-lot spread for reliable operation Low base-drive requirementsApplications 321 Switch mode power suppliesTO-247 Motor control DescriptionThe BUF410A is manufactured using high voltage Figure 1. Internal schematic diagram
buf410.pdf
BUF410HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTSAPPLICATIONS:3 SWITCH MODE POWER SUPPLIES2 MOTOR CONTROL1DESCRIPTIONTO-218The BUF410 is manufactured using High VoltageMulti Epitaxial Planar technolo
buf410a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF410A DESCRIPTION High Voltage High Speed Switching APPLICATIONS Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCEV Collector-Emitter Voltage VBE= -1.5V 1000 V VCEO Collector-Emitter Vo
buf410.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF410 DESCRIPTION High Voltage High Speed Switching APPLICATIONS Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCEV Collector-Emitter Voltage VBE= -1.5V 850 V VCEO Collector-Emitter Volt
buf410ai.pdf
isc Silicon NPN Power Transistor BUF410AIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-frequency power supplies andmotor control applications.ABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
