BUH1015 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUH1015
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 160 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 700 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 16 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO218
Búsqueda de reemplazo de transistor bipolar BUH1015
BUH1015 Datasheet (PDF)
buh1015.pdf
BUH1015BUH1015HIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEEDAPPLICATIONS: HORIZONTAL DEFLECTION FOR COLOURTV AND MONITORSDESCRIPTION 3 32 2The BUH1015and BUH1015HI are manufactured11using Multiepitaxial Mesa technology forcost-effective high performance and uses aTO-218 ISOWAT
buh1015.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUH1015 DESCRIPTION With TO-3PN package. High voltage. High switching speed. APPLICATIONS Horizontal deflection for colour TV and monitors. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum
buh1015hi.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUH1015HI DESCRIPTION With TO-3PML package. High voltage. High switching speed. APPLICATIONS Horizontal deflection for colour TV and monitors. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maxi
buh100re.pdf
Order this documentMOTOROLAby BUH100/DSEMICONDUCTOR TECHNICAL DATABUH100Designer's Data SheetPOWER TRANSISTOR10 AMPERESSWITCHMODE NPN Silicon700 VOLTSPlanar Power Transistor100 WATTSThe BUH100 has an application specific stateofart die designed for use in100 Watts Halogen electronic transformers.This power transistor is specifically designed to sustain the l
buh100-d.pdf
BUH100GSWITCHMODEt NPN SiliconPlanar Power TransistorThe BUH100G has an application specific state-of-art die designedfor use in 100 Watts Halogen electronic transformers.This power transistor is specifically designed to sustain the largehttp://onsemi.cominrush current during either the startup conditions or under a shortcircuit across the load.POWER TRANSISTORSFeatures10
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: NSVS50031SB3
History: NSVS50031SB3
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Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050