Биполярный транзистор BUH1015 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BUH1015
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 160 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 16 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: TO218
BUH1015 Datasheet (PDF)
buh1015.pdf
BUH1015BUH1015HIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEEDAPPLICATIONS: HORIZONTAL DEFLECTION FOR COLOURTV AND MONITORSDESCRIPTION 3 32 2The BUH1015and BUH1015HI are manufactured11using Multiepitaxial Mesa technology forcost-effective high performance and uses aTO-218 ISOWAT
buh1015.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUH1015 DESCRIPTION With TO-3PN package. High voltage. High switching speed. APPLICATIONS Horizontal deflection for colour TV and monitors. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum
buh1015hi.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUH1015HI DESCRIPTION With TO-3PML package. High voltage. High switching speed. APPLICATIONS Horizontal deflection for colour TV and monitors. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maxi
buh100re.pdf
Order this documentMOTOROLAby BUH100/DSEMICONDUCTOR TECHNICAL DATABUH100Designer's Data SheetPOWER TRANSISTOR10 AMPERESSWITCHMODE NPN Silicon700 VOLTSPlanar Power Transistor100 WATTSThe BUH100 has an application specific stateofart die designed for use in100 Watts Halogen electronic transformers.This power transistor is specifically designed to sustain the l
buh100-d.pdf
BUH100GSWITCHMODEt NPN SiliconPlanar Power TransistorThe BUH100G has an application specific state-of-art die designedfor use in 100 Watts Halogen electronic transformers.This power transistor is specifically designed to sustain the largehttp://onsemi.cominrush current during either the startup conditions or under a shortcircuit across the load.POWER TRANSISTORSFeatures10
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050