BUH315DXI Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUH315DXI

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 700 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 5.5

Encapsulados: ISOWATT218

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BUH315DXI datasheet

 7.1. Size:216K  st
 buh315dfh.pdf pdf_icon

BUH315DXI

BUH315DFH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW Fully Plastic TO-220 for HIGH VOLTAGE APPLICATIONS HIGH VOLTAGE CAPABILITY ( > 1500 V ) FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE CREEPAGE DISTANCE PATH > 4 mm APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR TVS TO-220FH DESCRIPTION The dev

 7.2. Size:84K  st
 buh315d.pdf pdf_icon

BUH315DXI

BUH315D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE. APPLICATIONS 3 HORIZONTAL DEFLECTION FOR COLOUR 2 TV 1 DESCRIPTION ISOWATT218 The BUH315D is manufactured using Multiepitaxial Mesa technology for cos

 7.3. Size:105K  inchange semiconductor
 buh315d.pdf pdf_icon

BUH315DXI

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUH315D DESCRIPTION High Switching Speed High Voltage Built-in Integrated Diode APPLICATIONS Designed for use in horizontal deflection circuits in TV s and monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emi

MOSTRAR MÁS

Otros transistores... BUH1215, BUH150, BUH2M20AP, BUH2M20P, BUH313, BUH313D, BUH315, BUH315D, S9014, BUH415DXI, BUH417, BUH50, BUH51, BUH513, BUH515, BUH515D, BUH515DXI