BUH315DXI Specs and Replacement
Type Designator: BUH315DXI
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 5.5
Package: ISOWATT218
BUH315DXI Substitution
- BJT ⓘ Cross-Reference Search
BUH315DXI datasheet
BUH315DFH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW Fully Plastic TO-220 for HIGH VOLTAGE APPLICATIONS HIGH VOLTAGE CAPABILITY ( > 1500 V ) FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE CREEPAGE DISTANCE PATH > 4 mm APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR TVS TO-220FH DESCRIPTION The dev... See More ⇒
BUH315D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE. APPLICATIONS 3 HORIZONTAL DEFLECTION FOR COLOUR 2 TV 1 DESCRIPTION ISOWATT218 The BUH315D is manufactured using Multiepitaxial Mesa technology for cos... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUH315D DESCRIPTION High Switching Speed High Voltage Built-in Integrated Diode APPLICATIONS Designed for use in horizontal deflection circuits in TV s and monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emi... See More ⇒
Detailed specifications: BUH1215, BUH150, BUH2M20AP, BUH2M20P, BUH313, BUH313D, BUH315, BUH315D, S9014, BUH415DXI, BUH417, BUH50, BUH51, BUH513, BUH515, BUH515D, BUH515DXI
Keywords - BUH315DXI pdf specs
BUH315DXI cross reference
BUH315DXI equivalent finder
BUH315DXI pdf lookup
BUH315DXI substitution
BUH315DXI replacement
