BUH315DXI Datasheet, Equivalent, Cross Reference Search

   Type Designator: BUH315DXI
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 5.5
   Noise Figure, dB: -
   Package: ISOWATT218

BUH315DXI Transistor Equivalent Substitute - Cross-Reference Search

BUY TRANSISTORS