BUL213 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUL213

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 1300 V

Tensión colector-emisor (Vce): 600 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 16

Encapsulados: TO220

 Búsqueda de reemplazo de BUL213

- Selecciónⓘ de transistores por parámetros

 

BUL213 datasheet

 ..1. Size:174K  st
 bul213.pdf pdf_icon

BUL213

BUL213 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC 3 2 1 APPLICATIONS ELECTRONIC BALLASTS FOR TO-220 FLUORESCENT LIGHTING SWITCH MODE POWER S

 9.1. Size:241K  st
 bul216.pdf pdf_icon

BUL213

BUL216 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH OPERATING JUNCTION TEMPERATURE HIGH RUGGEDNESS 3 2 APPLICATIONS 1 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING TO-220 SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL216 is manufactured using

 9.2. Size:276K  inchange semiconductor
 bul216.pdf pdf_icon

BUL213

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL216 DESCRIPTION Collector Emitter Sustaining Voltage VCEO(SUS) = 800V(Min.) High Switching Speed APPLICATIONS Designed for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Vo

Otros transistores... BUH517, BUH517D, BUH615, BUH715, BUL146, BUL146F, BUL147, BUL147F, 2SD313, BUL216, BUL26, BUL26D, BUL310, BUL310PI, BUL381, BUL381D, BUL382