BUL213 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUL213
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 1300 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 16
Noise Figure, dB: -
Package: TO220
BUL213 Transistor Equivalent Substitute - Cross-Reference Search
BUL213 Datasheet (PDF)
bul213.pdf
BUL213HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC 321APPLICATIONS ELECTRONIC BALLASTS FORTO-220FLUORESCENT LIGHTING SWITCH MODE POWER S
bul216.pdf
BUL216HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH OPERATING JUNCTIONTEMPERATURE HIGH RUGGEDNESS 32APPLICATIONS 1 ELECTRONIC BALLASTS FORFLUORESCENT LIGHTING TO-220 SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL216 is manufactured using
bul216.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL216 DESCRIPTIONCollectorEmitter Sustaining Voltage : VCEO(SUS) = 800V(Min.) High Switching Speed APPLICATIONSDesigned for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector-Emitter Vo
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
