BUL213 Specs and Replacement
Type Designator: BUL213
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 1300 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 16
Package: TO220
BUL213 Substitution
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BUL213 datasheet
BUL213 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC 3 2 1 APPLICATIONS ELECTRONIC BALLASTS FOR TO-220 FLUORESCENT LIGHTING SWITCH MODE POWER S... See More ⇒
BUL216 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH OPERATING JUNCTION TEMPERATURE HIGH RUGGEDNESS 3 2 APPLICATIONS 1 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING TO-220 SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL216 is manufactured using... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL216 DESCRIPTION Collector Emitter Sustaining Voltage VCEO(SUS) = 800V(Min.) High Switching Speed APPLICATIONS Designed for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Vo... See More ⇒
Detailed specifications: BUH517, BUH517D, BUH615, BUH715, BUL146, BUL146F, BUL147, BUL147F, 2SD313, BUL216, BUL26, BUL26D, BUL310, BUL310PI, BUL381, BUL381D, BUL382
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