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BUL382 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUL382
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 70 W
   Tensión colector-base (Vcb): 800 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 8
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

BUL382 Datasheet (PDF)

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BUL382

BUL381DBUL382DHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 321APPLICATIONS ELECTRONIC TRANSFORMERS FORTO-220HALOGEN LAMPS ELECTRONIC

 ..2. Size:281K  inchange semiconductor
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BUL382

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL382 DESCRIPTIONCollectorEmitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A Very High Switching Speed APPLICATIONSDesigned for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMU

 0.1. Size:213K  inchange semiconductor
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BUL382

isc Silicon NPN Power Transistor BUL382DDESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 0.5V(Max) @ I = 1ACE(sat) CHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in lighting applications and l

 9.1. Size:225K  st
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BUL382

BUL38DHigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed High ruggedness32 Fully characterized at 125 C1 Integrated antiparallel collector-emitter diodeTO-220Applications Electronic transformers for halo

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SA909 | 2N4355 | MUN5116DW1T1G | 2SC2959 | 2N1196 | 2SA1480E

 

 
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