BUL382 Specs and Replacement
Type Designator: BUL382
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO220
- BJT ⓘ Cross-Reference Search
BUL382 datasheet
..1. Size:79K st
bul381 bul382.pdf 

BUL381D BUL382D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 2 1 APPLICATIONS ELECTRONIC TRANSFORMERS FOR TO-220 HALOGEN LAMPS ELECTRONIC... See More ⇒
..2. Size:281K inchange semiconductor
bul382.pdf 

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL382 DESCRIPTION Collector Emitter Sustaining Voltage VCEO(SUS) = 400V(Min.) Low Collector Saturation Voltage VCE(sat) = 0.5V(Max) @ IC= 1A Very High Switching Speed APPLICATIONS Designed for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMU... See More ⇒
0.1. Size:213K inchange semiconductor
bul382d.pdf 

isc Silicon NPN Power Transistor BUL382D DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 0.5V(Max) @ I = 1A CE(sat) C High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in lighting applications and l... See More ⇒
9.1. Size:225K st
bul38d.pdf 

BUL38D High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed High ruggedness 3 2 Fully characterized at 125 C 1 Integrated antiparallel collector-emitter diode TO-220 Applications Electronic transformers for halo... See More ⇒
9.2. Size:72K st
bul381-2.pdf 

BUL381 BUL382 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATIONS ELECTRONIC BALLASTS FOR 3 2 FLUORESCENT LIGHTING 1 SWITCH MODE POWER SUPPLIES TO-220 DESCRIPTION The BUL381 and BUL382 manufactured usin... See More ⇒
9.3. Size:205K st
bul381d.pdf 

BUL381D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLEL 3 2 COLLECTOR-EMITTER DIODE 1 APPLICATIONS TO-220 ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS ... See More ⇒
9.4. Size:78K jmnic
bul381.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors BUL381 DESCRIPTION With TO-220C package High voltage capability Very high switching speed APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter LIMITING VALUES SYMB... See More ⇒
9.5. Size:80K jmnic
bul381d.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors BUL381D DESCRIPTION With TO-220C package High voltage capability Very high switching speed Integrated antiparallel collector-emitter diode APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to ... See More ⇒
9.6. Size:120K inchange semiconductor
bul381.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL381 DESCRIPTION With TO-220C package High voltage capability Very high switching speed APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maxi... See More ⇒
9.7. Size:220K inchange semiconductor
bul38d.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL38D DESCRIPTION Collector Emitter Sustaining Voltage V = 450V(Min.) CEO(SUS) Collector Saturation Voltage V = 0.5V(Max) @ I = 1.0A CE(sat) C Very High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in lighting applications and ... See More ⇒
9.8. Size:121K inchange semiconductor
bul381d.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL381D DESCRIPTION With TO-220C package High voltage ,high speed Integrated antiparallel collector-emitter diode APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base ... See More ⇒
Detailed specifications: BUL213, BUL216, BUL26, BUL26D, BUL310, BUL310PI, BUL381, BUL381D, 2SC945, BUL38D, BUL410, BUL416, BUL46A, BUL46B, BUL47A, BUL47B, BUL48
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