BUL382 Datasheet and Replacement

BUL381DBUL382DHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 321APPLICATIONS ELECTRONIC TRANSFORMERS FORTO-220HALOGEN LAMPS ELECTRONIC

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL382 DESCRIPTIONCollectorEmitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A Very High Switching Speed APPLICATIONSDesigned for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMU

isc Silicon NPN Power Transistor BUL382DDESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 0.5V(Max) @ I = 1ACE(sat) CHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in lighting applications and l

BUL38DHigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed High ruggedness32 Fully characterized at 125 C1 Integrated antiparallel collector-emitter diodeTO-220Applications Electronic transformers for halo

BUL381BUL382 HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oCAPPLICATIONS ELECTRONIC BALLASTS FOR32FLUORESCENT LIGHTING1 SWITCH MODE POWER SUPPLIESTO-220DESCRIPTIONThe BUL381 and BUL382 manufactured usin

BUL381DHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLEL 32COLLECTOR-EMITTER DIODE 1APPLICATIONS TO-220 ELECTRONIC TRANSFORMERS FORHALOGEN LAMPS

Product Specification www.jmnic.com Silicon NPN Power Transistors BUL381 DESCRIPTION With TO-220C package High voltage capability Very high switching speed APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterLIMITING VALUES SYMB

Product Specification www.jmnic.com Silicon NPN Power Transistors BUL381D DESCRIPTION With TO-220C package High voltage capability Very high switching speed Integrated antiparallel collector-emitter diode APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION1 Base Collector;connected to

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL381 DESCRIPTION With TO-220C package High voltage capability Very high switching speed APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maxi

INCHANGE Semiconductorisc Silicon NPN Power Transistor BUL38DDESCRIPTIONCollectorEmitter Sustaining Voltage: V = 450V(Min.)CEO(SUS)Collector Saturation Voltage: V = 0.5V(Max) @ I = 1.0ACE(sat) CVery High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in lighting applications and

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL381D DESCRIPTION With TO-220C package High voltage ,high speed Integrated antiparallel collector-emitter diode APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base