BUL416 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUL416HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORn STMicroelectronics PREFERRED SALES Figure 1: PackageTYPEn NPN TRANSISTORn HIGH VOLTAGE CAPABILITYn VERY HIGH SWITCHING SPEEDn FULLY CHARACTERISEZ AT 125 oCn LOW SPREAD OF DYNAMIC PARAMETERS32APPLICATIONS1 TO-220n ELECTRONIC BALLAST FOR FLUORESCENT LIGHTINGn SWITCH MODE POWER SUPPLIESFigure 2: Internal Sch

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL416 DESCRIPTIONCollectorEmitter Sustaining Voltage : VCEO(SUS) = 800V(Min.) Low Collector Saturation Voltage : VCE(sat) = 1.5V(Max) @ IC= 2A Very High Switching Speed APPLICATIONSDesigned for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMU

BUL416THigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Very high switching speedApplications32 Electronic ballast for fluorescent lighting 1 Switch mode power suppliesTO-220DescriptionThe BUL416T is an high voltage fast-switching NPN power transistor manufactured in planar Figure 1. In

INCHANGE Semiconductorisc Silicon NPN Power Transistor BUL416TDESCRIPTIONCollectorEmitter Sustaining Voltage: V = 800V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.5V(Max) @ I = 2ACE(sat) CVery High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in lighting applications a