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BUL416 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUL416
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 85 W
   Tensión colector-base (Vcb): 1600 V
   Tensión colector-emisor (Vce): 800 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 12
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar BUL416

 

BUL416 Datasheet (PDF)

 ..1. Size:212K  st
bul416.pdf

BUL416 BUL416

BUL416HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORn STMicroelectronics PREFERRED SALES Figure 1: PackageTYPEn NPN TRANSISTORn HIGH VOLTAGE CAPABILITYn VERY HIGH SWITCHING SPEEDn FULLY CHARACTERISEZ AT 125 oCn LOW SPREAD OF DYNAMIC PARAMETERS32APPLICATIONS1 TO-220n ELECTRONIC BALLAST FOR FLUORESCENT LIGHTINGn SWITCH MODE POWER SUPPLIESFigure 2: Internal Sch

 ..2. Size:287K  inchange semiconductor
bul416.pdf

BUL416 BUL416

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL416 DESCRIPTIONCollectorEmitter Sustaining Voltage : VCEO(SUS) = 800V(Min.) Low Collector Saturation Voltage : VCE(sat) = 1.5V(Max) @ IC= 2A Very High Switching Speed APPLICATIONSDesigned for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMU

 0.1. Size:119K  st
bul416t.pdf

BUL416 BUL416

BUL416THigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Very high switching speedApplications32 Electronic ballast for fluorescent lighting 1 Switch mode power suppliesTO-220DescriptionThe BUL416T is an high voltage fast-switching NPN power transistor manufactured in planar Figure 1. In

 0.2. Size:211K  inchange semiconductor
bul416t.pdf

BUL416 BUL416

INCHANGE Semiconductorisc Silicon NPN Power Transistor BUL416TDESCRIPTIONCollectorEmitter Sustaining Voltage: V = 800V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.5V(Max) @ I = 2ACE(sat) CVery High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in lighting applications a

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N6594 | 2SA1010

 

 
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History: 2N6594 | 2SA1010

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