BUL54AFI . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUL54AFI
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 1000 V
   Tensión colector-emisor (Vce): 500 V
   Corriente del colector DC máxima (Ic): 4 A

CARACTERÍSTICAS ELÉCTRICAS

Paquete / Cubierta: TO220F

Búsqueda de reemplazo de transistor bipolar BUL54AFI

BUL54AFI Datasheet (PDF)

8.1. Size:20K semelab
bul54asmd.pdf

BUL54ASMDADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGEHIGH SPEED NPN SILICON POWER TRANSISTOR SEMEFAB DESIGNED AND DIFFUSED DIEHIGH VOLTAGE FAST SWITCHING (tf = 40ns)EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE HIGH ENERGY RATINGE

8.2. Size:15K semelab
bul54a-sm.pdf

BUL54ASMSEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGEHIGH SPEED NPNSILICON POWER TRANSISTORSEMEFAB DESIGNED AND DIFFUSED DIE11.52.00.25 HIGH VOLTAGE3.5 3.5 3.0FAST SWITCHING (tf = 40ns)EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE1 3HIGH ENERGY RATINGEFFICIENT POWER SWITCHING2MILITARY AND HIREL

8.3. Size:137K semelab
bul54a-to5.pdf

SILICON POWER NPN TRANSISTOR BUL54A-TO5 Advanced Distributed Base design High Voltage Fast Switching High Energy Rating Screening Options Available Features: Features:Features:Features: Multibase for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.

8.4. Size:15K semelab
bul54a-t257f.pdf

BUL54A-T257FSEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE4.50HIGH SPEED NPN4.8110.400.7510.800.95SILICON POWER TRANSISTOR3.50Dia.3.70Designed for use in electronic ballast applications1 2 31.0 dia.3 places SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING0.750.852.54 2.65

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N5534

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050