BUL58D Todos los transistores

 

BUL58D Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUL58D
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 75 W
   Tensión colector-base (Vcb): 800 V
   Tensión colector-emisor (Vce): 450 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 8
   Paquete / Cubierta: TO220
 

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BUL58D PDF detailed specifications

 ..1. Size:213K  st
 bul58d.pdf pdf_icon

BUL58D

BUL58D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS 3 VERY HIGH SWITCHING SPEED 2 FULLY CHARACTERISED AT 125oC 1 HIGH RUGGEDNESS INTEGRATED ANTIPARALLEL TO-220 COL... See More ⇒

 9.1. Size:22K  semelab
 bul58bsmd.pdf pdf_icon

BUL58D

BUL58BSMD ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING FEATURES Multi base for efficient energy distribution a... See More ⇒

 9.2. Size:10K  semelab
 bul58asmd.pdf pdf_icon

BUL58D

BUL58ASMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 160V IC = 10A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 ... See More ⇒

Otros transistores... BUL55B , BUL56A , BUL56B , BUL57 , BUL57A , BUL57PI , BUL58A , BUL58B , BD333 , BUL59A , BUL67 , BUL74A , BUL74B , BUL76A , BUL76B , BUL810 , BUL87 .

 

 
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