BUS12B Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUS12B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 125 W

Tensión colector-base (Vcb): 1000 V

Tensión colector-emisor (Vce): 600 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO3

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BUS12B datasheet

 9.1. Size:181K  inchange semiconductor
 bus12a.pdf pdf_icon

BUS12B

isc Silicon NPN Power Transistor BUS12A DESCRIPTION Collector Emitter Sustaining Voltage V = 450V(Min.) CEO(SUS) High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(T

 9.2. Size:116K  inchange semiconductor
 bus12.pdf pdf_icon

BUS12B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUS12 DESCRIPTION With TO-3 package High voltage,high speed APPLICATIONS Designed for switching-mode power supplies ,CRT scanning,inverters, and other industrial applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Abs

 9.3. Size:77K  inchange semiconductor
 bus12 a.pdf pdf_icon

BUS12B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUS12/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V (Min)-BUS12 450V (Min)-BUS12A APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER

Otros transistores... BUS11-4, BUS11-6, BUS11A, BUS11B, BUS12, BUS12-4, BUS12-6, BUS12A, 2N3904, BUS13, BUS13-5, BUS13-6, BUS13-7, BUS131, BUS131A, BUS131H, BUS132