BUS12B Specs and Replacement
Type Designator: BUS12B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO3
BUS12B Substitution
- BJT ⓘ Cross-Reference Search
BUS12B datasheet
isc Silicon NPN Power Transistor BUS12A DESCRIPTION Collector Emitter Sustaining Voltage V = 450V(Min.) CEO(SUS) High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUS12 DESCRIPTION With TO-3 package High voltage,high speed APPLICATIONS Designed for switching-mode power supplies ,CRT scanning,inverters, and other industrial applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Abs... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUS12/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V (Min)-BUS12 450V (Min)-BUS12A APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER ... See More ⇒
Detailed specifications: BUS11-4, BUS11-6, BUS11A, BUS11B, BUS12, BUS12-4, BUS12-6, BUS12A, 2N3904, BUS13, BUS13-5, BUS13-6, BUS13-7, BUS131, BUS131A, BUS131H, BUS132
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