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BUT11 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUT11

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 800 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 160 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 5

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar BUT11

 

BUT11 Datasheet (PDF)

1.1. but11apx.pdf Size:60K _update

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variati

1.2. but11afr.pdf Size:120K _motorola

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Order this document MOTOROLA by BUT11AF/D SEMICONDUCTOR TECHNICAL DATA BUT11AF Full Pak High Voltage NPN Power Transistor POWER TRANSISTOR 5.0 AMPERES For Isolated Package Applications 450 VOLTS 40 WATTS The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art bipolar fabricati

1.3. but11ax 1.pdf Size:110K _philips

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AX GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage

1.4. but11 1.pdf Size:77K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors 1997 Aug 13 Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package.

1.5. but11ax.pdf Size:122K _philips

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AX GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage

1.6. but11f 1.pdf Size:106K _philips

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11F GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VC

1.7. but11apx.pdf Size:61K _philips

BUT11
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations

1.8. but11ai 1.pdf Size:18K _philips

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control systems etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP.

1.9. but11xi 1.pdf Size:69K _philips

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11XI GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in electronic HF/OH lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS

1.10. but11af 1.pdf Size:105K _philips

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AF GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V

1.11. but110.pdf Size:41K _st

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BUT100 HIGH POWER NPN SILICON TRANSISTOR n HIGH EFFICIENCY SWITCHING n VERY LOW SATURATION VOLTAGE n RECTANGULAR SAFE OPERATION AREA n WIDE ACCIDENTAL OVERLOAD AREA DESCRIPTION Suitable for motor drivers, SMPS converters, uninterruptable power supply operating low 1 voltage supply. 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEV Collector

1.12. but11a.pdf Size:66K _st

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BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE 3 2 TRANSISTOR LOW POWER CONVERTERS 1 TO-220 DESCRIPTION The BUT11A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package, particularly intended for switching

1.13. but11af but11f.pdf Size:47K _fairchild_semi

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BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BUT11F 850 V : BUT11AF 1000 V VCEO Collector-Emitter Voltage : BUT11F 400 V : BUT11AF 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 5

1.14. but11a but11.pdf Size:42K _fairchild_semi

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BUT11/11A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage V : BUT11 850 : BUT11A 1000 VCEO Collector-Emitter Voltage V : BUT11 400 : BUT11A 450 VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 5 A ICP *Co

1.15. but11.pdf Size:21K _samsung

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BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH TO-220 SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCES 850 V : BUT11 1000 V : BUT11A Collector Emitter Voltage VCEO 400 V : BUT11 450 V : BUT11A Emitter Base Voltage VEBO 9 V 1.Base 2.Collector 3.Emitter Collector Current (DC) IC 5 A Collector Current (Puls

1.16. but11afi.pdf Size:223K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11AFI DESCRIPTION · ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 1000 V VCEO Collector-Emitter Voltage 450 V V

1.17. but11fi.pdf Size:224K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11FI DESCRIPTION · ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 850 V VCEO Collector-Emitter Voltage 400 V VEB

1.18. but11.pdf Size:164K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11 DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base

1.19. but11a.pdf Size:194K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11A DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Ba

1.20. but11af.pdf Size:159K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11AF DESCRIPTION · ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter

1.21. but11apx.pdf Size:226K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11APX DESCRIPTION · ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 1000 V VCEO Collector-Emitter Voltage 450 V V

Otros transistores... BUS51 , BUS52 , BUS97 , BUS97A , BUS98 , BUS98A , BUT100 , BUT102 , BC548B , BUT11-5 , BUT11-6 , BUT11-7 , BUT11A , BUT11AF , BUT11AFI , BUT11AX , BUT11F .

 


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