BUT11 - описание и поиск аналогов

 ..1. Size:77K  philips
 but11 1.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors 1997 Aug 13 Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package

 ..2. Size:42K  fairchild semi
 but11a but11.pdf 

BUT11/11A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage V BUT11 850 BUT11A 1000 VCEO Collector-Emitter Voltage V BUT11 400 BUT11A 450 VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 5 A ICP

 ..3. Size:21K  samsung
 but11.pdf 

BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH TO-220 SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCES 850 V BUT11 1000 V BUT11A Collector Emitter Voltage VCEO 400 V BUT11 450 V BUT11A Emitter Base Voltage VEBO 9 V 1.Base 2.Collector 3.Emitter Collector Current (DC) IC 5 A Collector Current (P

 ..4. Size:159K  onsemi
 but11 but11a.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..5. Size:164K  inchange semiconductor
 but11.pdf 

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11 DESCRIPTION High Voltage High Speed Switching APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter

 0.1. Size:120K  motorola
 but11afr.pdf 

Order this document MOTOROLA by BUT11AF/D SEMICONDUCTOR TECHNICAL DATA BUT11AF Full Pak High Voltage NPN Power Transistor POWER TRANSISTOR 5.0 AMPERES For Isolated Package Applications 450 VOLTS 40 WATTS The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art bipolar fabric

 0.2. Size:60K  philips
 but11apx.pdf 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variati

 0.3. Size:18K  philips
 but11ai.pdf 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control systems etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS T

 0.4. Size:106K  philips
 but11f 1.pdf 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11F GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

 0.5. Size:69K  philips
 but11xi 1.pdf 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11XI GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in electronic HF/OH lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITI

 0.6. Size:18K  philips
 but11ai 1.pdf 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control systems etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS T

 0.7. Size:110K  philips
 but11ax 1.pdf 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AX GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter volta

 0.8. Size:122K  philips
 but11ax.pdf 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AX GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter volta

 0.9. Size:105K  philips
 but11af 1.pdf 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AF GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

 0.10. Size:41K  st
 but110.pdf 

BUT100 HIGH POWER NPN SILICON TRANSISTOR n HIGH EFFICIENCY SWITCHING n VERY LOW SATURATION VOLTAGE n RECTANGULAR SAFE OPERATION AREA n WIDE ACCIDENTAL OVERLOAD AREA DESCRIPTION Suitable for motor drivers, SMPS converters, uninterruptable power supply operating low 1 voltage supply. 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEV Collec

 0.11. Size:66K  st
 but11a.pdf 

BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS FLYBACK AND FORWARD SINGLE 3 2 TRANSISTOR LOW POWER CONVERTERS 1 TO-220 DESCRIPTION The BUT11A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package, particularly intended for switch

 0.12. Size:47K  fairchild semi
 but11af but11f.pdf 

BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BUT11F 850 V BUT11AF 1000 V VCEO Collector-Emitter Voltage BUT11F 400 V BUT11AF 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC

 0.13. Size:226K  inchange semiconductor
 but11apx.pdf 

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11APX DESCRIPTION High Voltage High Speed Switching APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 1000 V VCEO Collector-Emitter Voltage 450

 0.14. Size:209K  inchange semiconductor
 but11ai.pdf 

isc Silicon NPN Power Transistor BUT11AI DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1000 V CBO V Collector-Emitter

 0.15. Size:224K  inchange semiconductor
 but11fi.pdf 

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11FI DESCRIPTION High Voltage High Speed Switching APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 850 V VCEO Collector-Emitter Voltage 400 V

 0.16. Size:194K  inchange semiconductor
 but11a.pdf 

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11A DESCRIPTION High Voltage High Speed Switching APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitt

 0.17. Size:223K  inchange semiconductor
 but11afi.pdf 

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11AFI DESCRIPTION High Voltage High Speed Switching APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 1000 V VCEO Collector-Emitter Voltage 450

 0.18. Size:159K  inchange semiconductor
 but11af.pdf 

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11AF DESCRIPTION High Voltage High Speed Switching APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Em