BUT11AFI Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUT11AFI

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 35 W

Tensión colector-base (Vcb): 1000 V

Tensión colector-emisor (Vce): 450 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO220F

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BUT11AFI datasheet

 ..1. Size:223K  inchange semiconductor
 but11afi.pdf pdf_icon

BUT11AFI

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11AFI DESCRIPTION High Voltage High Speed Switching APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 1000 V VCEO Collector-Emitter Voltage 450

 7.1. Size:120K  motorola
 but11afr.pdf pdf_icon

BUT11AFI

Order this document MOTOROLA by BUT11AF/D SEMICONDUCTOR TECHNICAL DATA BUT11AF Full Pak High Voltage NPN Power Transistor POWER TRANSISTOR 5.0 AMPERES For Isolated Package Applications 450 VOLTS 40 WATTS The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art bipolar fabric

 7.2. Size:105K  philips
 but11af 1.pdf pdf_icon

BUT11AFI

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AF GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

 7.3. Size:47K  fairchild semi
 but11af but11f.pdf pdf_icon

BUT11AFI

BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BUT11F 850 V BUT11AF 1000 V VCEO Collector-Emitter Voltage BUT11F 400 V BUT11AF 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC

MOSTRAR MÁS

Otros transistores... BUT100, BUT102, BUT11, BUT11-5, BUT11-6, BUT11-7, BUT11A, BUT11AF, NJW0281G, BUT11AX, BUT11F, BUT12, BUT12A, BUT12AF, BUT12AFI, BUT12F, BUT13