BUT11AFI Datasheet, Equivalent, Cross Reference Search
Type Designator: BUT11AFI
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO220F
BUT11AFI Transistor Equivalent Substitute - Cross-Reference Search
BUT11AFI Datasheet (PDF)
but11afi.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11AFI DESCRIPTION High Voltage High Speed Switching APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector-Emitter Voltage VBE= 0 1000 V VCEO Collector-Emitter Voltage 450
but11afr.pdf
Order this documentMOTOROLAby BUT11AF/DSEMICONDUCTOR TECHNICAL DATABUT11AFFull PakHigh Voltage NPN Power TransistorPOWER TRANSISTOR5.0 AMPERESFor Isolated Package Applications450 VOLTS40 WATTSThe BUT11AF was designed for use in line operated switching power supplies in awide range of end use applications. This device combines the latest state of the artbipolar fabric
but11af 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AF GENERAL DESCRIPTIONHigh-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulatedmounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
but11af but11f.pdf
BUT11F/11AFHigh Voltage Power Switching ApplicationsTO-220F11.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BUT11F 850 V: BUT11AF 1000 V VCEO Collector-Emitter Voltage: BUT11F 400 V: BUT11AF 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC
but11af.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11AF DESCRIPTION High Voltage High Speed Switching APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Em
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
