BUT12F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORSDATA SHEETBUT12F; BUT12AFSilicon diffused power transistors1997 Aug 13Product specificationSupersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUT12F; BUT12AFDESCRIPTION PINNINGHigh-voltage, high-speed,PIN DESCRIPTIONglass-passivated NPN power1 b

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT12F BUT12AF DESCRIPTION With TO-220Fa package High voltage ,high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings (Tc=

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12XI GENERAL DESCRIPTIONImproved high-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope speciallysuited for overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,motor control systems, etc.QUICK REFERENCE DATASYMB

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTIONImproved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suitedfor use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,motor control systems, etc.QUICK REFERENCE DATASYMBOL

DISCRETE SEMICONDUCTORSDATA SHEETBUT12; BUT12ASilicon diffused power transistorsProduct specification 1997 Aug 13Supersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUT12; BUT12ADESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a TO-220AB package.

BUT12/12AHigh Voltage Power Switching ApplicationsTO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BUT12 850 V: BUT12A 1000 V VCEO Collector-Emitter Voltage: BUT12 400 V: BUT12A 450 V IC Collector Current (DC) 8 A ICP *Collector Current (Pulse)

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT12A DESCRIPTION High Voltage High Speed Switching APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitt

isc Silicon NPN Power Transistor BUT12AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSConvertersInvertersSwitching regulatorsMotor control systemsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P