BUT12F Specs and Replacement

Type Designator: BUT12F

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 23 W

Maximum Collector-Base Voltage |Vcb|: 850 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: SOT186

 BUT12F Substitution

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BUT12F datasheet

 ..1. Size:78K  philips

but12f 1.pdf pdf_icon

BUT12F

DISCRETE SEMICONDUCTORS DATA SHEET BUT12F; BUT12AF Silicon diffused power transistors 1997 Aug 13 Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUT12F; BUT12AF DESCRIPTION PINNING High-voltage, high-speed, PIN DESCRIPTION glass-passivated NPN power 1 b... See More ⇒

 ..2. Size:119K  inchange semiconductor

but12f but12af.pdf pdf_icon

BUT12F

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT12F BUT12AF DESCRIPTION With TO-220Fa package High voltage ,high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings (Tc=... See More ⇒

 9.1. Size:59K  philips

but12xi 1.pdf pdf_icon

BUT12F

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12XI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope specially suited for overhead/high frequency lighting ballast applications and converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMB... See More ⇒

 9.2. Size:52K  philips

but12ai 1.pdf pdf_icon

BUT12F

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL ... See More ⇒

Detailed specifications: BUT11AF, BUT11AFI, BUT11AX, BUT11F, BUT12, BUT12A, BUT12AF, BUT12AFI, BC556, BUT13, BUT131, BUT131A, BUT131H, BUT13P, BUT13PFI, BUT14, BUT15

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