BUV23 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUV23
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 250 W
Tensión colector-base (Vcb): 400 V
Tensión colector-emisor (Vce): 325 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 30 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 8 MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar BUV23
BUV23 Datasheet (PDF)
buv23.pdf
NPN BUV23POWER SWITCH APPLICATIONSPOWER SWITCH APPLICATIONSThe BUV23 is silicon multiepitaxial mesa NPN transistors in Jedec TO-3.They are intended for use in power switching appications in military and industrial equipments.ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitCollector-Emitter Voltage IB = 0VCEO 325 VVCBO Collector-Base Voltage IE = 0 400 VVEBO Emitter-Base Vol
buv23.pdf
isc Silicon NPN Power Transistor BUV23DESCRIPTIONLow Collector Saturation Voltage-: V = 0.8V (Max.) @I = 8ACE(sat) CHigh Switching SpeedHigh DC Current Gain-: h = 15(Min.) @I = 8AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplications.Absolute maximum rati
buv23rev.pdf
Order this documentMOTOROLAby BUV23/DSEMICONDUCTOR TECHNICAL DATABUV23SWITCHMODE Series30 AMPERESNPN Silicon Power TransistorNPN SILICONPOWER. . . designed for high current, high speed, high power applications.METAL TRANSISTOR High DC current gain: HFE min. = 15 at IC = 8 A325 VOLTS Low VCE(sat), VCE(sat) max. = 0.8 V at IC = 8 A250 WATTS Very fast switc
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
